The phenomenon of electron accumulation has been observed and identified at the surfaces of numerous semiconducting materials, including ZnO and InAs, and is in marked contrast to the electron depletion typically observed at the surfaces of conventional III-V, II-VI and Group IV semiconductor materials. However, with the advent of high-quality epitaxially grown materials, a more general model...
Magnetic anisotropy (MA) is one of the most important properties of ferromagnetic materials since it leads to magnetic hysteresis and coercive forces, which are necessary for permanent magnets and information storage devices [1]. MA arises from combined effects of spin-orbit cou-pling (SOC) and anisotropic electronic structure. Soft x-ray dichroism is a powerful method to investi-gate the...
